NanoTCAD: 3D Device Simulations with Radiation Effects
CFDRC has developed the NanoTCAD software suite for advanced semiconductor device modeling (3D, steady-state, transient) with built-in models of radiation effects. Simulations are readily controlled through user-friendly graphical interface, and results are viewed by convenient post-processing and visualization tools (x-y plots, 3D plots, vectors, colors, animations...)
Electron density along ion track and current vectors
Charge-collection iso-surfaces during ion strike
- NanoTCAD can efficiently simulate nano-scale electronics and the specific radiation effects:
- single-event effects (SEE), including single-event transients (SET), and single-event upsets (SEU)
- degradation (displacement damage) effects in materials, sensors, photonic devices, such as solar cells, photodetectors, and active pixel imaging sensors
- total ionizing dose (TID) effects in oxides and interfaces
- prompt dose rate (transient radiation) effects, like X ray pulses, resulting in parasitic photocurrents
- Convenient import of circuit layouts (GDSII, CIF, DXF) generated by EDA tools...
>> fast and easy generation of 3D model and mesh of complex multi-layer electronic structures and ICs - The advanced, state-of-the-art numerical methods allow for efficient and reliable simulation of modern technologies and devices - validated on nanometer-scale Si CMOS, SiGe BiCMOS/HBT, 45nm SOI, III-V HBTs, III-V HEMTs, plus QW and QD based Solar Cells and IR Photodetectors
- CFDRC’s Expertise and Solutions and NanoTCAD tools have been verified and validated in numerous projects for DoD, NASA, DOE, and Space/Defense Industry.
The CFDRC modeling and simulation solutions expedite rad-hard design, by reducing reliance on expensive and time-consuming test chip fabrication and radiation testing.
